Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Trevor A. Petach, Konstantin V. Reich, Xiao Zhang, Kenji Watanabe, Takashi Taniguchi, Boris I. Shklovskii, David Goldhaber-Gordon

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Original languageEnglish (US)
Pages (from-to)8395-8400
Number of pages6
JournalACS nano
Volume11
Issue number8
DOIs
StatePublished - Aug 22 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

  • boron nitride
  • electronic transport
  • field-effect transistor
  • graphene
  • ionic liquid

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 4

PubMed: MeSH publication types

  • Journal Article
  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

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