Disorder on GaAs(001) surfaces prepared by molecular beam epitaxy

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Disorder 55%
• Reflection High Energy Electron Diffraction 41%
• Surface 20%
• Long-Range Order 16%
• Disordered Structure 16%
• Length 7%

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Reflection high energy electron diffraction 66%
• Fluxes 26%
• Temperature 19%
• Switches 11%

Physics & Astronomy

• molecular beam epitaxy 54%
• disorders 49%
• high energy electrons 25%
• electron diffraction 21%
• switches 10%
• temperature 3%