Doping effects in co-deposited mixed phase films of hydrogenated amorphous silicon containing nanocrystalline inclusions

C. Blackwell, Xiaodong Pi, U. Kortshagen, J. Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
PublisherMaterials Research Society
Pages155-160
Number of pages6
ISBN (Print)9781605110363
DOIs
StatePublished - Jan 1 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1066
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

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