The directed self-assembly (DSA) of two sub-20 nm pitch silicon-containing block copolymers (BCPs) was accomplished using a double-patterned sidewall scheme in which each lithographic prepatterned feature produced two regions for pattern registration. In doing so, the critical dimension of the lithographic prepatterns was relaxed by a factor of 2 compared to previously reported schemes for DSA. The key to enabling the double-patterned sidewall scheme is the exploitation of the oxidized sidewalls of cross-linked polystyrene formed during the pattern transfer of the resist via reactive ion etching. This results in shallow trenches with two guiding interfaces per prepatterned feature. Electron loss spectroscopy was used to study and confirm the guiding mechanism of the double-patterned sidewalls, and pattern transfer of the BCPs into a silicon substrate was achieved using reactive ion etching. The line edge roughness, width roughness, and placement error are near the target required for bit-patterned media applications, and the technique is also compatible with the needs of the semiconductor industry for high-volume manufacturing. (Figure Presented).
Bibliographical notePublisher Copyright:
© 2015 American Chemical Society.
- block copolymer
- chemical contrast patterns
- density multiplication
- directed self-assembly
- top coat