Dual-chamber plasma co-deposition of nanoparticles in amorphous silicon thin films

C. Anderson, C. Blackwell, J. Deneen, C. B. Carter, J. Kakalios, U. Kortshagen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The production of hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) is demonstrated using a new deposition process. Crystalline Si nanoparticles around 5 nm in diameter are generated in a flow-through plasma reactor, and are introduced into a downstream capacitively-coupled plasma enhanced chemical vapor deposition reactor where the particles are "co-deposited" with the amorphous phase of the film. Transmission electron microscopy confirms the presence of crystalline inclusions in these films, as well as providing confirmation that the crystalline particles are indeed produced in the flow-through reactor and not in the capacitive plasma. Electrical measurements indicate an improvement in the dark conductivity of the intrinsic a/nc-Si:H films as the particle concentration is increased, suggesting that the particles have a doping effect on the films charge transport properties.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages79-84
Number of pages6
Volume910
StatePublished - Jun 12 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

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