Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

B. I. Shklovskii; B. Z. Spivak

doi:10.1007/BF01017862

Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

B. I. Shklovskii, B. Z. Spivak

Physics and Astronomy (Twin Cities)

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Abstract

Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na³) or a(Na³)^1/2.

Original language	English (US)
Pages (from-to)	267-272
Number of pages	6
Journal	Journal of Statistical Physics
Volume	38
Issue number	1-2
DOIs	https://doi.org/10.1007/BF01017862
State	Published - Jan 1 1985

Keywords

Impurity
hopping conduction
tunneling

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abstract = "Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.",

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N2 - Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.

AB - Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.

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KW - hopping conduction

KW - tunneling

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Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

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Keywords

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