Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

B. I. Shklovskii, B. Z. Spivak

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13 Scopus citations

Abstract

Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.

Original languageEnglish (US)
Pages (from-to)267-272
Number of pages6
JournalJournal of Statistical Physics
Volume38
Issue number1-2
DOIs
StatePublished - Jan 1 1985

Keywords

  • Impurity
  • hopping conduction
  • tunneling

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