Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1-xN interfaces

L. Hsu, W. Walukiewicz

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

We have calculated the donor defect profiles in pseudomorphic AlxGa1-xN layers grown on GaN, taking into account the effects of the strain polarization field on the defect formation energy. Under certain conditions, the defect concentration may be enhanced by more than one order of magnitude. These large concentrations combined with the band bending effects of the piezoelectric field makes the charge transfer from the AlxGa1-xN barrier to the GaN well extremely efficient, resulting in a two-dimensional electron gas of very high density and low mobility. These results explain recent experimental observations of large electron densities found in nominally undoped GaN/AlGaN heterostructures.

Original languageEnglish
Pages (from-to)339-341
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number3
DOIs
StatePublished - 1998

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