Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Xu Hui Zhang, Bin Ma, Zong Zhi Zhang, Qing Yuan Jin

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Abstract

Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

Original languageEnglish (US)
Article number107504
JournalChinese Physics B
Volume19
Issue number10
DOIs
StatePublished - Oct 1 2010

Keywords

  • Buffer layer
  • L1
  • τ-MnAl

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