Efficient electrical control of thin-film black phosphorus bandgap

Bingchen Deng, Vy Tran, Yujun Xie, Hao Jiang, Cheng Li, Qiushi Guo, Xiaomu Wang, He Tian, Steven J. Koester, Han Wang, Judy J. Cha, Qiangfei Xia, Li Yang, Fengnian Xia

Research output: Contribution to journalArticlepeer-review

131 Scopus citations


Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometre is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10 nm-Thick black phosphorus, we continuously tune its bandgap from ∼ 300 to below 50 meV, using a moderate displacement field up to 1.1 V nm 1. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and semimetals.

Original languageEnglish (US)
Article number14474
JournalNature communications
StatePublished - Apr 19 2017

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 3

PubMed: MeSH publication types

  • Journal Article
  • Research Support, U.S. Gov't, Non-P.H.S.
  • Research Support, Non-U.S. Gov't


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