Electrical and magnetic characteristics of MBE-grown GaMnN

J. D. Albrecht; J. E. Van Nostrand; B. Claflin; Y. Liu; M. I. Nathan; P. P. Ruden

doi:10.1007/s10948-005-2152-x

Electrical and magnetic characteristics of MBE-grown GaMnN

J. D. Albrecht, J. E. Van Nostrand, B. Claflin, Y. Liu, M. I. Nathan, P. P. Ruden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagnetism up to 300 K. Magnetization curves as a function of temperature indicate a phase transition near 170 K. Temperature-dependent Hall effect measurements show n-type characteristics with high carrier concentration and low mobility, which are both only weakly dependent on temperature. Piezoresistance measurements under hydrostatic pressure yield pressure coefficients that show little variation for temperatures of 77, 194, and 300 K.

Original language	English (US)
Pages (from-to)	69-73
Number of pages	5
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s10948-005-2152-x
State	Published - 2005

Keywords

Ferromagnetic semiconductor
GaMnN
Hydrostatic pressure
Molecular beam epitaxy

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title = "Electrical and magnetic characteristics of MBE-grown GaMnN",

abstract = "We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagnetism up to 300 K. Magnetization curves as a function of temperature indicate a phase transition near 170 K. Temperature-dependent Hall effect measurements show n-type characteristics with high carrier concentration and low mobility, which are both only weakly dependent on temperature. Piezoresistance measurements under hydrostatic pressure yield pressure coefficients that show little variation for temperatures of 77, 194, and 300 K.",

keywords = "Ferromagnetic semiconductor, GaMnN, Hydrostatic pressure, Molecular beam epitaxy",

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TY - JOUR

T1 - Electrical and magnetic characteristics of MBE-grown GaMnN

AU - Albrecht, J. D.

AU - Van Nostrand, J. E.

AU - Claflin, B.

AU - Liu, Y.

AU - Nathan, M. I.

AU - Ruden, P. P.

PY - 2005

Y1 - 2005

N2 - We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagnetism up to 300 K. Magnetization curves as a function of temperature indicate a phase transition near 170 K. Temperature-dependent Hall effect measurements show n-type characteristics with high carrier concentration and low mobility, which are both only weakly dependent on temperature. Piezoresistance measurements under hydrostatic pressure yield pressure coefficients that show little variation for temperatures of 77, 194, and 300 K.

AB - We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagnetism up to 300 K. Magnetization curves as a function of temperature indicate a phase transition near 170 K. Temperature-dependent Hall effect measurements show n-type characteristics with high carrier concentration and low mobility, which are both only weakly dependent on temperature. Piezoresistance measurements under hydrostatic pressure yield pressure coefficients that show little variation for temperatures of 77, 194, and 300 K.

KW - Ferromagnetic semiconductor

KW - GaMnN

KW - Hydrostatic pressure

KW - Molecular beam epitaxy

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JO - Journal of Superconductivity and Novel Magnetism

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Electrical and magnetic characteristics of MBE-grown GaMnN

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