Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

P. Sai; D. B. But; M. Dub; M. Sakowicz; B. Grzywacz; P. Prystawko; G. Cywinski; W. Knap; S. Rumyantsev

doi:10.1109/ESSDERC.2019.8901702

Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski, W. Knap, S. Rumyantsev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.

Original language	English (US)
Title of host publication	49th European Solid-State Device Research Conference, ESSDERC 2019
Publisher	Editions Frontieres
Pages	90-93
Number of pages	4
ISBN (Electronic)	9781728115399
DOIs	https://doi.org/10.1109/ESSDERC.2019.8901702
State	Published - Sep 2019
Externally published	Yes
Event	49th European Solid-State Device Research Conference, ESSDERC 2019 - Cracow, Poland Duration: Sep 23 2019 → Sep 26 2019

Publication series

Name	European Solid-State Device Research Conference
Volume	2019-September
ISSN (Print)	1930-8876

Conference

Conference	49th European Solid-State Device Research Conference, ESSDERC 2019
Country	Poland
City	Cracow
Period	9/23/19 → 9/26/19

Keywords

EdgeFET
FinFET
lateral Schottky diode

Access

10.1109/ESSDERC.2019.8901702

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Cite this

Sai, P., But, D. B., Dub, M., Sakowicz, M., Grzywacz, B., Prystawko, P., Cywinski, G., Knap, W., & Rumyantsev, S. (2019). Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. In 49th European Solid-State Device Research Conference, ESSDERC 2019 (pp. 90-93). [8901702] (European Solid-State Device Research Conference; Vol. 2019-September). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2019.8901702

Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. / Sai, P.; But, D. B.; Dub, M.; Sakowicz, M.; Grzywacz, B.; Prystawko, P.; Cywinski, G.; Knap, W.; Rumyantsev, S.

49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres, 2019. p. 90-93 8901702 (European Solid-State Device Research Conference; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sai, P, But, DB, Dub, M, Sakowicz, M, Grzywacz, B, Prystawko, P, Cywinski, G, Knap, W & Rumyantsev, S 2019, Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. in 49th European Solid-State Device Research Conference, ESSDERC 2019., 8901702, European Solid-State Device Research Conference, vol. 2019-September, Editions Frontieres, pp. 90-93, 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, 9/23/19. https://doi.org/10.1109/ESSDERC.2019.8901702

Sai P, But DB, Dub M, Sakowicz M, Grzywacz B, Prystawko P et al. Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. In 49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres. 2019. p. 90-93. 8901702. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2019.8901702

Sai, P. ; But, D. B. ; Dub, M. ; Sakowicz, M. ; Grzywacz, B. ; Prystawko, P. ; Cywinski, G. ; Knap, W. ; Rumyantsev, S. / Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. 49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres, 2019. pp. 90-93 (European Solid-State Device Research Conference).

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abstract = "GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.",

keywords = "EdgeFET, FinFET, lateral Schottky diode",

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