Electrical stressed effects of metal-organic chemical vapor deposited high permittivity TiO2 dielectric metal-oxide-semiconductor field effect transistors

Hyeon Seag Kim, S. A. Campbell, D. C. Gilmer

Research output: Contribution to conferencePaperpeer-review

Abstract

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higher permittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 angstroms layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide. Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

Original languageEnglish (US)
Pages1039-1042
Number of pages4
StatePublished - Jan 1 1997
EventProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea
Duration: May 25 1997May 30 1997

Other

OtherProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
CitySeoul, Korea
Period5/25/975/30/97

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