Electrical switching of terahertz radiation on vanadium dioxide thin film fabricated with nano antennas

Y. G. Jeong, H. Bernien, J. S. Kyoung, H. S. Kim, H. R. Park, B. J. Kim, T. Kim, D. S. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electrical switching of terahertz radiation through nano antennas on VO 2 thin film is demonstrated and is compared with bare VO 2. Rectangular apertures act as slot antennas which attract terahertz radiation when VO 2 is in semi-conducting state. These antennas are turned-off when VO 2 becomes metallic by bias, giving an enhanced control of transmission.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages967-968
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Keywords

  • Terahertz spectroscopy
  • nano antenna
  • phase transition device
  • terahertz VO

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