Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low; M. F. Li; Chen Shen; Yee Chia Yeo; Y. T. Hou; Chunxiang Zhu; Albert Chin; D. L. Kwong

doi:10.1063/1.1788888

Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low, M. F. Li, Chen Shen, Yee Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T _body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T _bidy.

Original language	English (US)
Pages (from-to)	2402-2404
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1788888
State	Published - Sep 20 2004

Bibliographical note

Funding Information:
This work is supported by the Singapore A*STAR R263-000-267-305 and IME/03–450002 JML/SOI Grant. We gratefully acknowledge useful discussions with D. Esseni on Coulomb scattering. We appreciate useful discussions with M. V. Fischetti and D. K. Ferry pertaining to their published literatures. We also thank S. Takagi for providing the experimental data from his classic paper.

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title = "Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors",

abstract = "The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.",

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AU - Low, Tony

AU - Li, M. F.

AU - Shen, Chen

AU - Yeo, Yee Chia

AU - Hou, Y. T.

AU - Zhu, Chunxiang

AU - Chin, Albert

AU - Kwong, D. L.

N1 - Funding Information: This work is supported by the Singapore A*STAR R263-000-267-305 and IME/03–450002 JML/SOI Grant. We gratefully acknowledge useful discussions with D. Esseni on Coulomb scattering. We appreciate useful discussions with M. V. Fischetti and D. K. Ferry pertaining to their published literatures. We also thank S. Takagi for providing the experimental data from his classic paper.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.

AB - The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.

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Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

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