Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low, M. F. Li, Chen Shen, Yee Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

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28 Scopus citations

Abstract

The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.

Original languageEnglish (US)
Pages (from-to)2402-2404
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number12
DOIs
StatePublished - Sep 20 2004

Bibliographical note

Funding Information:
This work is supported by the Singapore A*STAR R263-000-267-305 and IME/03–450002 JML/SOI Grant. We gratefully acknowledge useful discussions with D. Esseni on Coulomb scattering. We appreciate useful discussions with M. V. Fischetti and D. K. Ferry pertaining to their published literatures. We also thank S. Takagi for providing the experimental data from his classic paper.

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