TY - GEN
T1 - Electron spin flip scattering in graphene due to substrate impurities
AU - Goswami, Aditi
AU - Liu, Yue
AU - Liu, Feilong
AU - Paul Ruden, P.
AU - Smith, Darryl L.
PY - 2013
Y1 - 2013
N2 - Graphene is a promising material for electronic and spintronic applications due to its high carrier mobility and low intrinsic spin-orbit interaction. However, extrinsic effects may easily dominate intrinsic scattering mechanisms. The scattering mechanisms investigated here are associated non-magnetic, charged impurities in the substrate (e.g. SiO2) beneath the graphene layer. Such impurities cause an electric field that extends through the graphene and has a non- vanishing perpendicular component. Consequently, the impurity, in addition to the conventional elastic, spin-conserving scattering can give rise to spin-flip processes. The latter is a consequence of a spatially varying Rashba spin-orbit interaction caused by the electric field of the impurity in the substrate. Scattering cross-sections are calculated and, for assumed impurity distributions, relaxation times are estimated.
AB - Graphene is a promising material for electronic and spintronic applications due to its high carrier mobility and low intrinsic spin-orbit interaction. However, extrinsic effects may easily dominate intrinsic scattering mechanisms. The scattering mechanisms investigated here are associated non-magnetic, charged impurities in the substrate (e.g. SiO2) beneath the graphene layer. Such impurities cause an electric field that extends through the graphene and has a non- vanishing perpendicular component. Consequently, the impurity, in addition to the conventional elastic, spin-conserving scattering can give rise to spin-flip processes. The latter is a consequence of a spatially varying Rashba spin-orbit interaction caused by the electric field of the impurity in the substrate. Scattering cross-sections are calculated and, for assumed impurity distributions, relaxation times are estimated.
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U2 - 10.1557/opl.2013.246
DO - 10.1557/opl.2013.246
M3 - Conference contribution
AN - SCOPUS:84899808499
SN - 9781632660985
T3 - Materials Research Society Symposium Proceedings
SP - 17
EP - 22
BT - Carbon Nanomaterials
PB - Materials Research Society
T2 - 2012 MRS Fall Meeting
Y2 - 25 November 2012 through 30 November 2012
ER -