Electron transfer between regions of quasi-two-dimensional and three-dimensional dynamics in semiconductor microstructures

Alfred M. Kriman, P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

A theoretical study is carried out on the transfer of electrons at the edge of a microstructure, where electrons may cross between a region of quasi-two-dimensional dynamics and a contact region of three-dimensional dynamics. Working in the one-electron, effective-mass approximation, a formal solution is found for a model having a general profile for the confining potential in the two-dimensional region. The general form of the threshold behavior is found for ejection probabilites and injection cross sections. Numerical results are obtained for the case of a parabolic confining potential.

Original languageEnglish (US)
Pages (from-to)8013-8020
Number of pages8
JournalPhysical Review B
Volume32
Issue number12
DOIs
StatePublished - Jan 1 1985

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