Abstract
Thin film tunneling junctions of ErRh4B4 with counterelectrodes of Mg, In, Pb and Al have been formed using an artifical barrier of oxidized Er. Measurements of the tunneling characteristics indicate that the maximum value of 2Δ kBTc for ErRh4B4 is at least 4.2.
Original language | English (US) |
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Pages (from-to) | 803-804 |
Number of pages | 2 |
Journal | Physica B+C |
Volume | 108 |
Issue number | 1-3 |
DOIs | |
State | Published - 1981 |