Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser; A. X. Gray; G. Conti; B. Jalan; A. P. Kajdos; A. Gloskovskii; S. Ueda; Y. Yamashita; K. Kobayashi; W. Drube; S. Stemmer; C. S. Fadley

doi:10.1063/1.4731642

Electronic structure of delta-doped La:SrTiO ₃ layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, C. S. Fadley

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO ₃ layer that consisted of a 3-nm thickness of La-doped SrTiO ₃ with 6 La embedded in a SrTiO ₃ film. Results are compared to a thick, uniformily doped La:SrTiO ₃ layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti ³ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

Original language	English (US)
Article number	261603
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4731642
State	Published - Jun 25 2012

Bibliographical note

Funding Information:
Travel and salary support for A.X.G. and A.K. was provided by the MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398). Two of us (C.S.F. and G.C) also acknowledge salary support from the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Research at Stanford was supported through the Stanford Institute for Materials and Energy Science (SIMES) and the LCLS by the US Department of Energy, Office of Basic Energy Sciences. The HAXPES measuements at BL15XU of SPring-8 were performed under the approval of NIMS Beamline Station (Proposal No. 2010B4800). The authors are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of the HAXPES station at BL15XU of SPring-8. S.S. also acknowledges funding from NSF (Grant No. DMR-1006640). The HAXPES instrument at beamline P09 is jointly operated by the University of Würzburg (R. Claessen), the University of Mainz (C. Felser) and DESY. Funding by the Federal Ministry of Education and Research (BMBF) under contracts 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 is gratefully acknowledged.

Access

10.1063/1.4731642

OpenUrl availability

Full text

Cite this

@article{ba5850757acb457499f0471c98a88cf7,

title = "Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy",

abstract = "We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.",

author = "Kaiser, {A. M.} and Gray, {A. X.} and G. Conti and B. Jalan and Kajdos, {A. P.} and A. Gloskovskii and S. Ueda and Y. Yamashita and K. Kobayashi and W. Drube and S. Stemmer and Fadley, {C. S.}",

note = "Funding Information: Travel and salary support for A.X.G. and A.K. was provided by the MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398). Two of us (C.S.F. and G.C) also acknowledge salary support from the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Research at Stanford was supported through the Stanford Institute for Materials and Energy Science (SIMES) and the LCLS by the US Department of Energy, Office of Basic Energy Sciences. The HAXPES measuements at BL15XU of SPring-8 were performed under the approval of NIMS Beamline Station (Proposal No. 2010B4800). The authors are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of the HAXPES station at BL15XU of SPring-8. S.S. also acknowledges funding from NSF (Grant No. DMR-1006640). The HAXPES instrument at beamline P09 is jointly operated by the University of W{\"u}rzburg (R. Claessen), the University of Mainz (C. Felser) and DESY. Funding by the Federal Ministry of Education and Research (BMBF) under contracts 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 is gratefully acknowledged.",

year = "2012",

month = jun,

day = "25",

doi = "10.1063/1.4731642",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy

AU - Kaiser, A. M.

AU - Gray, A. X.

AU - Conti, G.

AU - Jalan, B.

AU - Kajdos, A. P.

AU - Gloskovskii, A.

AU - Ueda, S.

AU - Yamashita, Y.

AU - Kobayashi, K.

AU - Drube, W.

AU - Stemmer, S.

AU - Fadley, C. S.

N1 - Funding Information: Travel and salary support for A.X.G. and A.K. was provided by the MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398). Two of us (C.S.F. and G.C) also acknowledge salary support from the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Research at Stanford was supported through the Stanford Institute for Materials and Energy Science (SIMES) and the LCLS by the US Department of Energy, Office of Basic Energy Sciences. The HAXPES measuements at BL15XU of SPring-8 were performed under the approval of NIMS Beamline Station (Proposal No. 2010B4800). The authors are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of the HAXPES station at BL15XU of SPring-8. S.S. also acknowledges funding from NSF (Grant No. DMR-1006640). The HAXPES instrument at beamline P09 is jointly operated by the University of Würzburg (R. Claessen), the University of Mainz (C. Felser) and DESY. Funding by the Federal Ministry of Education and Research (BMBF) under contracts 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 is gratefully acknowledged.

PY - 2012/6/25

Y1 - 2012/6/25

N2 - We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

AB - We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

UR - http://www.scopus.com/inward/record.url?scp=84863331770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863331770&partnerID=8YFLogxK

U2 - 10.1063/1.4731642

DO - 10.1063/1.4731642

M3 - Article

AN - SCOPUS:84863331770

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261603

ER -