TY - JOUR
T1 - Electronic transport properties of a tilted graphene p-n junction
AU - Low, Tony
AU - Appenzeller, Joerg
PY - 2009/10/6
Y1 - 2009/10/6
N2 - Spatial manipulation of current flow in graphene could be achieved through the use of a tilted p-n junction. We show through numerical simulation that a pseudo-Hall effect (i.e., nonequilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the p-n transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect.
AB - Spatial manipulation of current flow in graphene could be achieved through the use of a tilted p-n junction. We show through numerical simulation that a pseudo-Hall effect (i.e., nonequilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the p-n transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect.
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U2 - 10.1103/PhysRevB.80.155406
DO - 10.1103/PhysRevB.80.155406
M3 - Article
AN - SCOPUS:72449161795
SN - 1098-0121
VL - 80
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 155406
ER -