Engineering SrSnO                         3                          Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Tianqi Wang; Abhinav Prakash; Yongqi Dong; Tristan Truttmann; Ashley Bucsek; Richard James; Dillon D. Fong; Jong Woo Kim; Philip J. Ryan; Hua Zhou; Turan Birol; Bharat Jalan

doi:10.1021/acsami.8b16592

Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Tianqi Wang, Abhinav Prakash, Yongqi Dong, Tristan Truttmann, Ashley Bucsek, Richard James, Dillon D. Fong, Jong Woo Kim, Philip J. Ryan, Hua Zhou, Turan Birol, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO ₃ (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. We argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.

Original language	English (US)
Pages (from-to)	43802-43808
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	50
DOIs	https://doi.org/10.1021/acsami.8b16592
State	Published - Dec 19 2018

Bibliographical note

Funding Information:
This work was primarily supported by the National Science Foundation through DMR-1741801 and DMR-1607318 and partially by the UMN MRSEC program under award no. DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-16-1-0205. The work also acknowledges partial support from the RDF Fund of the Institute on the Environment (UMN). Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. T.W. and A.P. would like to acknowledge the support from the UMN Doctoral Dissertation Fellowships. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under contract no. DE-AC02-06CH11357. D.D.F. was supported by U.S. Department of Energy, Office of Science Office of Basic Energy Sciences, Materials Sciences and Engineering Division.

Funding Information:
This work was primarily supported by the National Science Foundation through DMR-1741801 and DMR-1607318 and partially by the UMN MRSEC program under award no. DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-16-1-0205. The work also acknowledges partial support from the RDF Fund of the Institute on the Environment (UMN). Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. T.W. and A.P. would like to acknowledge the support from the UMN Doctoral Dissertation Fellowships. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under contract no. DE-AC02-06CH11357. D.D.F. was supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division.

Publisher Copyright:
© 2018 American Chemical Society.

Keywords

density functional theory
half-order diffraction
high mobility
hybrid molecular beam epitaxy
octahedral rotations
phase transition
strain engineering

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Partial

Reporting period for MRSEC

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PubMed: MeSH publication types

Journal Article

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10.1021/acsami.8b16592

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Cite this

Wang, T., Prakash, A., Dong, Y., Truttmann, T., Bucsek, A., James, R., Fong, D. D., Kim, J. W., Ryan, P. J., Zhou, H., Birol, T., & Jalan, B. (2018). Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain ACS Applied Materials and Interfaces, 10(50), 43802-43808. https://doi.org/10.1021/acsami.8b16592

Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain . / Wang, Tianqi; Prakash, Abhinav; Dong, Yongqi et al.
In: ACS Applied Materials and Interfaces, Vol. 10, No. 50, 19.12.2018, p. 43802-43808.

Research output: Contribution to journal › Article › peer-review

Wang, T, Prakash, A, Dong, Y, Truttmann, T, Bucsek, A, James, R, Fong, DD, Kim, JW, Ryan, PJ, Zhou, H, Birol, T & Jalan, B 2018, ' Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain ', ACS Applied Materials and Interfaces, vol. 10, no. 50, pp. 43802-43808. https://doi.org/10.1021/acsami.8b16592

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abstract = " High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO 3 (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. We argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.",

keywords = "density functional theory, half-order diffraction, high mobility, hybrid molecular beam epitaxy, octahedral rotations, phase transition, strain engineering",

author = "Tianqi Wang and Abhinav Prakash and Yongqi Dong and Tristan Truttmann and Ashley Bucsek and Richard James and Fong, {Dillon D.} and Kim, {Jong Woo} and Ryan, {Philip J.} and Hua Zhou and Turan Birol and Bharat Jalan",

note = "Funding Information: This work was primarily supported by the National Science Foundation through DMR-1741801 and DMR-1607318 and partially by the UMN MRSEC program under award no. DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-16-1-0205. The work also acknowledges partial support from the RDF Fund of the Institute on the Environment (UMN). Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. T.W. and A.P. would like to acknowledge the support from the UMN Doctoral Dissertation Fellowships. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under contract no. DE-AC02-06CH11357. D.D.F. was supported by U.S. Department of Energy, Office of Science Office of Basic Energy Sciences, Materials Sciences and Engineering Division. Funding Information: This work was primarily supported by the National Science Foundation through DMR-1741801 and DMR-1607318 and partially by the UMN MRSEC program under award no. DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-16-1-0205. The work also acknowledges partial support from the RDF Fund of the Institute on the Environment (UMN). Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. T.W. and A.P. would like to acknowledge the support from the UMN Doctoral Dissertation Fellowships. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under contract no. DE-AC02-06CH11357. D.D.F. was supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

PubMed: MeSH publication types

Access

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

PubMed: MeSH publication types

Access

OpenUrl availability

Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

Engineering SrSnO ₃ Phases and Electron Mobility at Room Temperature Using Epitaxial Strain