Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization

Punam Murkute, Hemant Ghadi, Shantanu Saha, Sushil Kumar Pandey, Subhananda Chakrabarti

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

High-quality radio frequency–sputtered ZnO were grown on Si substrates at 400 °C at various partial gas pressures (Ar/Ar+O2). Subsequently, to remove as-grown defects, high temperature annealing from 700 to 900 °C on as-grown samples in constant oxygen flow for 10 s was performed. X-ray diffraction study confirmed the formation of highly crystalline films with a dominant peak at (002). The sample grown in 50% Ar and 50% O2 ambient exhibited the lowest linewidth (2θ=~0.2728°) and highest stoichiometry. Grain size of the as grown samples decreased with increase in the partial pressure of oxygen till a certain ratio (1:1), and photoluminescence (PL) improved with increase in annealing temperature. Low-temperature (18 K) PL measurements showed a near-band-edge emission peak at 3.37 eV, and the highest peak intensity (more than six orders compared to others with narrow linewidth of ~0.01272 eV) was exhibited by the sample annealed at 900 °C and was six orders higher than that of the as-grown sample. All as-grown samples exhibited dominant visible-range peaks due to emission from defect states.

Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume66
DOIs
StatePublished - Aug 1 2017

Keywords

  • AFM
  • HRXRD
  • Photoluminescence
  • RF sputtering

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