Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization

Punam Murkute; Hemant Ghadi; Shantanu Saha; Sushil Kumar Pandey; Subhananda Chakrabarti

doi:10.1016/j.mssp.2017.03.026

Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization

Punam Murkute, Hemant Ghadi, Shantanu Saha, Sushil Kumar Pandey, Subhananda Chakrabarti

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

High-quality radio frequency–sputtered ZnO were grown on Si substrates at 400 °C at various partial gas pressures (Ar/Ar+O2). Subsequently, to remove as-grown defects, high temperature annealing from 700 to 900 °C on as-grown samples in constant oxygen flow for 10 s was performed. X-ray diffraction study confirmed the formation of highly crystalline films with a dominant peak at (002). The sample grown in 50% Ar and 50% O₂ ambient exhibited the lowest linewidth (2θ=~0.2728°) and highest stoichiometry. Grain size of the as grown samples decreased with increase in the partial pressure of oxygen till a certain ratio (1:1), and photoluminescence (PL) improved with increase in annealing temperature. Low-temperature (18 K) PL measurements showed a near-band-edge emission peak at 3.37 eV, and the highest peak intensity (more than six orders compared to others with narrow linewidth of ~0.01272 eV) was exhibited by the sample annealed at 900 °C and was six orders higher than that of the as-grown sample. All as-grown samples exhibited dominant visible-range peaks due to emission from defect states.

Original language	English (US)
Pages (from-to)	1-8
Number of pages	8
Journal	Materials Science in Semiconductor Processing
Volume	66
DOIs	https://doi.org/10.1016/j.mssp.2017.03.026
State	Published - Aug 1 2017

Bibliographical note

Funding Information:
The authors acknowledge the financial support from the Department of Science and Technology, India, and the partial financial support from the Department of Information Technology and the Nanofabrication facility at Indian Institute of Technology Bombay (IITB). The authors also acknowledge the SPM Physics and Hall Measurement Physics department at IITB. The funders had no role in the study design; in the collection, analysis and interpretation of data; in the writing of the report; and in the decision to submit the article for publication.

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

AFM
HRXRD
Photoluminescence
RF sputtering

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title = "Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization",

abstract = "High-quality radio frequency–sputtered ZnO were grown on Si substrates at 400 °C at various partial gas pressures (Ar/Ar+O2). Subsequently, to remove as-grown defects, high temperature annealing from 700 to 900 °C on as-grown samples in constant oxygen flow for 10 s was performed. X-ray diffraction study confirmed the formation of highly crystalline films with a dominant peak at (002). The sample grown in 50% Ar and 50% O2 ambient exhibited the lowest linewidth (2θ=~0.2728°) and highest stoichiometry. Grain size of the as grown samples decreased with increase in the partial pressure of oxygen till a certain ratio (1:1), and photoluminescence (PL) improved with increase in annealing temperature. Low-temperature (18 K) PL measurements showed a near-band-edge emission peak at 3.37 eV, and the highest peak intensity (more than six orders compared to others with narrow linewidth of ~0.01272 eV) was exhibited by the sample annealed at 900 °C and was six orders higher than that of the as-grown sample. All as-grown samples exhibited dominant visible-range peaks due to emission from defect states.",

keywords = "AFM, HRXRD, Photoluminescence, RF sputtering",

author = "Punam Murkute and Hemant Ghadi and Shantanu Saha and Pandey, {Sushil Kumar} and Subhananda Chakrabarti",

note = "Funding Information: The authors acknowledge the financial support from the Department of Science and Technology, India, and the partial financial support from the Department of Information Technology and the Nanofabrication facility at Indian Institute of Technology Bombay (IITB). The authors also acknowledge the SPM Physics and Hall Measurement Physics department at IITB. The funders had no role in the study design; in the collection, analysis and interpretation of data; in the writing of the report; and in the decision to submit the article for publication. Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

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AU - Pandey, Sushil Kumar

AU - Chakrabarti, Subhananda

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N2 - High-quality radio frequency–sputtered ZnO were grown on Si substrates at 400 °C at various partial gas pressures (Ar/Ar+O2). Subsequently, to remove as-grown defects, high temperature annealing from 700 to 900 °C on as-grown samples in constant oxygen flow for 10 s was performed. X-ray diffraction study confirmed the formation of highly crystalline films with a dominant peak at (002). The sample grown in 50% Ar and 50% O2 ambient exhibited the lowest linewidth (2θ=~0.2728°) and highest stoichiometry. Grain size of the as grown samples decreased with increase in the partial pressure of oxygen till a certain ratio (1:1), and photoluminescence (PL) improved with increase in annealing temperature. Low-temperature (18 K) PL measurements showed a near-band-edge emission peak at 3.37 eV, and the highest peak intensity (more than six orders compared to others with narrow linewidth of ~0.01272 eV) was exhibited by the sample annealed at 900 °C and was six orders higher than that of the as-grown sample. All as-grown samples exhibited dominant visible-range peaks due to emission from defect states.

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KW - AFM

KW - HRXRD

KW - Photoluminescence

KW - RF sputtering

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Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization

Abstract

Bibliographical note

Keywords

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