Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics

Yanning Sun, E. W. Kiewra, S. J. Koester, N. Ruiz, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J. P. Locquet, M. Sousa, R. Germann, K. T. Shiu, S. R. Forrest

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60 Scopus citations


The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

Original languageEnglish (US)
Pages (from-to)473-475
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2007


  • Buried channel
  • Enhancement mode
  • High-κ
  • InGaAs


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