The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.
- Buried channel
- Enhancement mode