Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics

Yanning Sun; E. W. Kiewra; S. J. Koester; N. Ruiz; A. Callegari; K. E. Fogel; D. K. Sadana; J. Fompeyrine; D. J. Webb; J. P. Locquet; M. Sousa; R. Germann; K. T. Shiu; S. R. Forrest

doi:10.1109/LED.2007.896813

Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics

Yanning Sun, E. W. Kiewra, S. J. Koester, N. Ruiz, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J. P. Locquet, M. Sousa, R. Germann, K. T. Shiu, S. R. Forrest

Electrical and Computer Engineering

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66 Scopus citations

Abstract

The operation of long- and short-channel enhancement-mode In_0.7Ga_0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have V_t a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm² For a gate length of 260 nm, the short-channel devices have V_t and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

Original language	English (US)
Pages (from-to)	473-475
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/LED.2007.896813
State	Published - Jun 2007

Keywords

Buried channel
Enhancement mode
High-κ
InGaAs
MOSFET

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Sun, Y., Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J. P., Sousa, M., Germann, R., Shiu, K. T., & Forrest, S. R. (2007). Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics. IEEE Electron Device Letters, 28(6), 473-475. https://doi.org/10.1109/LED.2007.896813

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title = "Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics",

abstract = "The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.",

keywords = "Buried channel, Enhancement mode, High-κ, InGaAs, MOSFET",

author = "Yanning Sun and Kiewra, {E. W.} and Koester, {S. J.} and N. Ruiz and A. Callegari and Fogel, {K. E.} and Sadana, {D. K.} and J. Fompeyrine and Webb, {D. J.} and Locquet, {J. P.} and M. Sousa and R. Germann and Shiu, {K. T.} and Forrest, {S. R.}",

year = "2007",

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doi = "10.1109/LED.2007.896813",

language = "English (US)",

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AU - Sun, Yanning

AU - Kiewra, E. W.

AU - Koester, S. J.

AU - Ruiz, N.

AU - Callegari, A.

AU - Fogel, K. E.

AU - Sadana, D. K.

AU - Fompeyrine, J.

AU - Webb, D. J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

AU - Shiu, K. T.

AU - Forrest, S. R.

PY - 2007/6

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AB - The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

KW - Buried channel

KW - Enhancement mode

KW - High-κ

KW - InGaAs

KW - MOSFET

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