Epitaxy of FeAl films on GaAs(100) by molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Epitaxial growth 90%
• Reflection high energy electron diffraction 44%
• Intermetallics 22%
• Lattice constants 15%
• Buffer layers 15%
• Substrates 15%
• Stoichiometry 14%
• Crystals 10%
• Adsorption 10%
• Thin films 10%
• Vacuum 9%
• Heating 7%
• Temperature 4%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Epitaxial Growth 78%
• Reflection High Energy Electron Diffraction 52%
• Liquid Film 31%
• Lattice Constant 17%
• Reaction Stoichiometry 13%
• Vacuum 12%
• Strain 11%
• Buffer Solution 10%

Physics & Astronomy

• epitaxy 63%
• molecular beam epitaxy 54%
• high energy electrons 18%
• intermetallics 16%
• electron diffraction 15%
• stoichiometry 8%
• buffers 7%
• adsorption 7%
• oscillations 5%
• vacuum 5%
• heating 5%
• kinetics 5%
• thin films 4%
• crystals 4%