Erratum: Expression of concern: Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots, Jae-Young Leem, Minhyun Jeon, Jewon Lee, Guansik Cho, Cheul-Ro Lee, Jong Su Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Hyung Koun Cho, Journal of Crystal Growth, Volume 252, Issue 4, May 2003, Pages 493–498 (Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots (2003) 252(4) (493–498), (S0022024803008662), (10.1016/S0022-0248(03)00866-2))

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Abstract

Concern has been raised about the publication of this article as we found similarities of this paper in the paper: Growth of room-temperature 1.32-μm-emitting InAs quantum dots using {GaAs/InAs} quasi-monolayers, Jong Su Kim, Dong-Youn Lee, I.H. Ban, Gu-Hyun Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Jin Soo Kim, Sang-Hoen Lee, Hyun Kwang Choi, Minhyon Jeon, Jae-Young Leem, Journal of the Korean Physical Society, Vol. 42 No. III, [2003] 237–240. https://doi.org/10.3938/jkps.42.237. The simultaneous submission or duplicate publication of a manuscript, and the lack of consistent authorship attribution are considered serious breaches of scientific ethics.

Original languageEnglish (US)
Article number126037
JournalJournal of Crystal Growth
Volume560-561
DOIs
StatePublished - Apr 15 2021

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