Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy

Vishnu Awasthi, Sushil Kumar Pandey, Shailendra Kumar, C. Mukherjee, Mukul Gupta, Shaibal Mukherjee

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


The bandgap alignment of a Ga-doped MgZnO (GMZO)/CIGSe heterojunction exposed to short duration Ar+ ion beam sputtering has been investigated by ultraviolet photoelectron spectroscopy measurement. The offset values at the valence and conduction band of the GMZO/CIGSe hetrojunction are calculated to be 2.69 and -0.63 eV, respectively. Moreover, the valence band onsets of GMZO and CIGSe thin films before and after few minutes Ar+ ion sputtering have been investigated. The presented study demonstrates the photoelectron-induced generation of resonant valence bulk and surface plasmonic features of various metal and metal oxide nanoclusters embedded within a GMZO matrix. The presence of such nanoclusters is proven to be beneficial in realizing cost-effective, ultra-thin, and high-performance photovoltaics based on the heterojunction.

Original languageEnglish (US)
Article number485305
JournalJournal of Physics D: Applied Physics
Issue number48
StatePublished - Nov 5 2015


  • CIGSe
  • DIBS
  • GMZO
  • Plasmonic
  • UPS
  • VBOff
  • VBOn

Fingerprint Dive into the research topics of 'Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg<sub>0.05</sub>Zn<sub>0.95</sub>O/CIGSe heterojunction by photoelectron spectroscopy'. Together they form a unique fingerprint.

Cite this