A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.
|Original language||English (US)|
|Title of host publication||Advanced Etch Technology for Nanopatterning VII|
|Editors||Sebastian U. Engelmann, Richard S. Wise|
|State||Published - 2018|
|Event||Advanced Etch Technology for Nanopatterning VII 2018 - San Jose, United States|
Duration: Feb 26 2018 → Feb 28 2018
|Name||Proceedings of SPIE - The International Society for Optical Engineering|
|Conference||Advanced Etch Technology for Nanopatterning VII 2018|
|Period||2/26/18 → 2/28/18|
Bibliographical notePublisher Copyright:
© 2018 SPIE.
Copyright 2018 Elsevier B.V., All rights reserved.
- Block copolymers
- Directed self-assembly
- Pattern transfer