Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J. Ellison, Diane Hymes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

Original languageEnglish (US)
Title of host publicationAdvanced Etch Technology for Nanopatterning VII
EditorsSebastian U. Engelmann, Richard S. Wise
PublisherSPIE
ISBN (Electronic)9781510616707
DOIs
StatePublished - 2018
EventAdvanced Etch Technology for Nanopatterning VII 2018 - San Jose, United States
Duration: Feb 26 2018Feb 28 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10589
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvanced Etch Technology for Nanopatterning VII 2018
CountryUnited States
CitySan Jose
Period2/26/182/28/18

Bibliographical note

Publisher Copyright:
© 2018 SPIE.

Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.

Keywords

  • Block copolymers
  • Directed self-assembly
  • High-chi
  • Pattern transfer
  • Roughness
  • Silicon-containing

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