Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

S. V. Bykova; V. D. Golyshev; M. A. Gonik; V. B. Tsvetovsky; V. I. Deshko; A. Ya Karvatskii; A. V. Lenkin; S. Brandon; O. Weinstein; A. Virozub; J. J. Derby; A. Yeckel; P. Sonda

doi:10.1016/j.jcrysgro.2004.02.052

Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

S. V. Bykova, V. D. Golyshev, M. A. Gonik, V. B. Tsvetovsky, V. I. Deshko, A. Ya Karvatskii, A. V. Lenkin, S. Brandon, O. Weinstein, A. Virozub, J. J. Derby, A. Yeckel, P. Sonda

Chemical Engineering and Materials Science

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi₄Ge₃O₁₂ (BGO) crystal on the measurement and calculation of melt/crystal interface kinetics during the axial heat flux close to the phase interface growth of BGO single crystals. Results show that, in the general case, accurate determination of growth kinetic relations requires the application of models which account for all of the above phenomena (radiative and convective heat transport, faceting phenomena, etc.). Failure to take these into account may result not only in quantitative errors, but also even in qualitatively wrong determination of interfacial kinetic mechanisms.

Original language	English (US)
Pages (from-to)	246-256
Number of pages	11
Journal	Journal of Crystal Growth
Volume	266
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.02.052
State	Published - May 15 2004
Event	Proceedings of the Fourth International Workshop on Modeling - Kyushu, Japan Duration: Nov 4 2003 → Nov 7 2003

Keywords

A1. Interfaces
A2. Growth from melt
B1. Bismuth germanate

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Bykova, S. V., Golyshev, V. D., Gonik, M. A., Tsvetovsky, V. B., Deshko, V. I., Karvatskii, A. Y., Lenkin, A. V., Brandon, S., Weinstein, O., Virozub, A., Derby, J. J., Yeckel, A., & Sonda, P. (2004). Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals. Journal of Crystal Growth, 266(1-3), 246-256. https://doi.org/10.1016/j.jcrysgro.2004.02.052

Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals. / Bykova, S. V.; Golyshev, V. D.; Gonik, M. A. et al.
In: Journal of Crystal Growth, Vol. 266, No. 1-3, 15.05.2004, p. 246-256.

Research output: Contribution to journal › Conference article › peer-review

Bykova, SV, Golyshev, VD, Gonik, MA, Tsvetovsky, VB, Deshko, VI, Karvatskii, AY, Lenkin, AV, Brandon, S, Weinstein, O, Virozub, A, Derby, JJ, Yeckel, A & Sonda, P 2004, 'Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals', Journal of Crystal Growth, vol. 266, no. 1-3, pp. 246-256. https://doi.org/10.1016/j.jcrysgro.2004.02.052

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title = "Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals",

abstract = "Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi4Ge3O12 (BGO) crystal on the measurement and calculation of melt/crystal interface kinetics during the axial heat flux close to the phase interface growth of BGO single crystals. Results show that, in the general case, accurate determination of growth kinetic relations requires the application of models which account for all of the above phenomena (radiative and convective heat transport, faceting phenomena, etc.). Failure to take these into account may result not only in quantitative errors, but also even in qualitatively wrong determination of interfacial kinetic mechanisms.",

keywords = "A1. Interfaces, A2. Growth from melt, B1. Bismuth germanate",

author = "Bykova, {S. V.} and Golyshev, {V. D.} and Gonik, {M. A.} and Tsvetovsky, {V. B.} and Deshko, {V. I.} and Karvatskii, {A. Ya} and Lenkin, {A. V.} and S. Brandon and O. Weinstein and A. Virozub and Derby, {J. J.} and A. Yeckel and P. Sonda",

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language = "English (US)",

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journal = "Journal of Crystal Growth",

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T1 - Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

AU - Bykova, S. V.

AU - Golyshev, V. D.

AU - Gonik, M. A.

AU - Tsvetovsky, V. B.

AU - Deshko, V. I.

AU - Karvatskii, A. Ya

AU - Lenkin, A. V.

AU - Brandon, S.

AU - Weinstein, O.

AU - Virozub, A.

AU - Derby, J. J.

AU - Yeckel, A.

AU - Sonda, P.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi4Ge3O12 (BGO) crystal on the measurement and calculation of melt/crystal interface kinetics during the axial heat flux close to the phase interface growth of BGO single crystals. Results show that, in the general case, accurate determination of growth kinetic relations requires the application of models which account for all of the above phenomena (radiative and convective heat transport, faceting phenomena, etc.). Failure to take these into account may result not only in quantitative errors, but also even in qualitatively wrong determination of interfacial kinetic mechanisms.

AB - Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi4Ge3O12 (BGO) crystal on the measurement and calculation of melt/crystal interface kinetics during the axial heat flux close to the phase interface growth of BGO single crystals. Results show that, in the general case, accurate determination of growth kinetic relations requires the application of models which account for all of the above phenomena (radiative and convective heat transport, faceting phenomena, etc.). Failure to take these into account may result not only in quantitative errors, but also even in qualitatively wrong determination of interfacial kinetic mechanisms.

KW - A1. Interfaces

KW - A2. Growth from melt

KW - B1. Bismuth germanate

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DO - 10.1016/j.jcrysgro.2004.02.052

M3 - Conference article

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SN - 0022-0248

VL - 266

SP - 246

EP - 256

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-3

T2 - Proceedings of the Fourth International Workshop on Modeling

Y2 - 4 November 2003 through 7 November 2003

ER -

Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

Abstract

Keywords

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