Abstract
RF glow discharge deposited hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) films are investigated as a function of a thermal gradient applied across the silane plasma during film growth. The a/nc-Si:H films are synthesized from hydrogen-diluted silane plasmas when a capacitively-coupled plasma enhanced chemical vapor deposition reactor is operated at high gas chamber pressures. Plasma diagnostics and transmission electron microscopy image analysis of films deposited with and without a thermal gradient suggest that nanoparticle formation occurs within the plasma, rather than resulting from solid-state nucleation at the growing film surface.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium Proceedings |
Editors | R. Collins, P.C. Taylor, M. Kondo, R. Carius, R. Biswas |
Pages | 313-318 |
Number of pages | 6 |
Volume | 862 |
State | Published - 2005 |
Event | 2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005 |
Other
Other | 2005 Materials Research Society Spring Meeting |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 3/28/05 → 4/1/05 |