Abstract
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.
Original language | English (US) |
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Article number | 6689297 |
Pages (from-to) | 617-624 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2014 |
Keywords
- Negative differential resistance (NDR)
- Terahertz operation
- Terms-Graphene field-effect transistor (GFET)
- voltage amplifier