TY - GEN
T1 - Extraction of two-port S-parameters for an electro-optical device
AU - Ghiasi, A.
AU - Gopinath, A.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.
AB - Semiconductor diode lasers are well suited for high speed lightwave communication systems due to their large intrinsic relaxation frequency. Diode lasers have been demonstrated with modulation frequency in excess of 20 GHz. As the laser modulation frequency extends in the microwave frequencies, device structure and the package may severely limit the response [1]. Therefore, at these rates an understanding of the device and package parasitic is essential. This will aid in de-coupling the laser's electrical response from the cascaded electro-optical measurement.
UR - http://www.scopus.com/inward/record.url?scp=85068262832&partnerID=8YFLogxK
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U2 - 10.1109/EPEP.1992.572259
DO - 10.1109/EPEP.1992.572259
M3 - Conference contribution
AN - SCOPUS:85068262832
T3 - Electrical Performance of Electronic Packaging, EPEP 1992
SP - 37
EP - 40
BT - Electrical Performance of Electronic Packaging, EPEP 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 Electrical Performance of Electronic Packaging, EPEP 1992
Y2 - 22 April 1992 through 24 April 1992
ER -