Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD

S. J. Koester; R. Hammond; J. O. Chu

doi:10.1109/55.823572

Extremely high transconductance Ge/Si_0.4Ge_0.6 p-MODFET's grown by UHV-CVD

S. J. Koester, R. Hammond, J. O. Chu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si_0.4Ge_0.6 heterostructure with a Hall mobility of 1750 cm²/Vs (30,900 cm²/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with L_g = 0.1 μm displayed an average peak extrinsic transconductance (g_mext) of 439 mS/mm, at a drain-to-source bias voltage (V_ds) of -0.6 V, with the best device having a value of g_m(ext) = 488 mS/mm. At 77 K, values as high as g_m(ext) = 687 mS/mm were obtained at a bias voltage of only V_ds = -0.2 V. These devices also displayed a unity current gain cutoff frequency (f_T) of 42 GHz and maximum frequency of oscillation (f_max) of 86 GHz at V_ds = -0.6 V and -1.0 V, respectively.

Original language	English (US)
Pages (from-to)	110-112
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	3
DOIs	https://doi.org/10.1109/55.823572
State	Published - Mar 2000

Bibliographical note

Funding Information:
Manuscript received August 24, 1999; revised November 24, 1999. This work was supported in part by SPAWAR Systems Center, Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor D. Ueda. The authors are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: skoester@us.ibm.com). Publisher Item Identifier S 0741-3106(00)02119-4.

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title = "Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD",

abstract = "Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si0.4Ge0.6 heterostructure with a Hall mobility of 1750 cm2/Vs (30,900 cm2/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with Lg = 0.1 μm displayed an average peak extrinsic transconductance (gmext) of 439 mS/mm, at a drain-to-source bias voltage (Vds) of -0.6 V, with the best device having a value of gm(ext) = 488 mS/mm. At 77 K, values as high as gm(ext) = 687 mS/mm were obtained at a bias voltage of only Vds = -0.2 V. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz at Vds = -0.6 V and -1.0 V, respectively.",

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note = "Funding Information: Manuscript received August 24, 1999; revised November 24, 1999. This work was supported in part by SPAWAR Systems Center, Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor D. Ueda. The authors are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: skoester@us.ibm.com). Publisher Item Identifier S 0741-3106(00)02119-4.",

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AU - Hammond, R.

AU - Chu, J. O.

N1 - Funding Information: Manuscript received August 24, 1999; revised November 24, 1999. This work was supported in part by SPAWAR Systems Center, Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor D. Ueda. The authors are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: skoester@us.ibm.com). Publisher Item Identifier S 0741-3106(00)02119-4.

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N2 - Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si0.4Ge0.6 heterostructure with a Hall mobility of 1750 cm2/Vs (30,900 cm2/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with Lg = 0.1 μm displayed an average peak extrinsic transconductance (gmext) of 439 mS/mm, at a drain-to-source bias voltage (Vds) of -0.6 V, with the best device having a value of gm(ext) = 488 mS/mm. At 77 K, values as high as gm(ext) = 687 mS/mm were obtained at a bias voltage of only Vds = -0.2 V. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz at Vds = -0.6 V and -1.0 V, respectively.

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