Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD

S. J. Koester, R. Hammond, J. O. Chu

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Fingerprint

Dive into the research topics of 'Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science