Fabrication and characterization of GaN/AlGaN ultraviolet-band heterojunction photodiodes

Subash Krishnankutty, Wei Yang, Thomas Nohava, P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Results from MOCVD grown n-Al0.1Ga0.9N/i-GaN/p-GaN UV photodetectors on sapphire substrates are presented. The devices show peak responsivities near 0.2A/W for wavelengths between 352nm and 362nm, and responsivities of less than 10-3A/W for wavelengths longer than 375nm and shorter than 342nm. The data is explained in terms of a simple device model.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume3
DOIs
StatePublished - Jan 1 1998

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