TY - JOUR
T1 - Fabrication and characterization of poly(3,4-ethylenedioxythiophene) field-effect transistors
AU - Liang, Guirong
AU - Cui, Tianhong
PY - 2004/1/1
Y1 - 2004/1/1
N2 - The organic field-effect transistors with poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT/PSS) as p-type semiconductor are fabricated on heavily doped silicon substrate working as the gate. Dielectric layer, semiconductor, and source/drain layer are deposited by spin coating and then patterned with UV lithography and RIE techniques using aluminum thin film as the mask. The electrical characteristics of the device have been investigated in the atmosphere at room temperature. The devices have field-effect mobility as high as 0.8 cm2/VS, on/off current ratio larger than 105, threshold voltage of 9.3 V, and subthreshold slope of 4.5 V/decade.
AB - The organic field-effect transistors with poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT/PSS) as p-type semiconductor are fabricated on heavily doped silicon substrate working as the gate. Dielectric layer, semiconductor, and source/drain layer are deposited by spin coating and then patterned with UV lithography and RIE techniques using aluminum thin film as the mask. The electrical characteristics of the device have been investigated in the atmosphere at room temperature. The devices have field-effect mobility as high as 0.8 cm2/VS, on/off current ratio larger than 105, threshold voltage of 9.3 V, and subthreshold slope of 4.5 V/decade.
KW - Organic field-effect transistor
KW - Poly(3,4-ethylenedioxythiophene)
KW - Reactive ion etching
KW - Spin coating
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U2 - 10.1016/S0038-1101(03)00264-8
DO - 10.1016/S0038-1101(03)00264-8
M3 - Article
AN - SCOPUS:0142154126
SN - 0038-1101
VL - 48
SP - 87
EP - 89
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 1
ER -