Fabrication and electrical characteristics of polymer-based Schottky diode

Guirong Liang, Tianhong Cui, Kody Varahramyan

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 104, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.

Original languageEnglish (US)
Pages (from-to)691-694
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number4
DOIs
StatePublished - Apr 2003
Externally publishedYes

Keywords

  • I-V characteristics
  • Norde function
  • PEDT/PSS
  • Polymer Schottky diode
  • Spin-coating

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