Fabrication and electrical characteristics of polymer-based Schottky diode

Guirong Liang; Tianhong Cui; Kody Varahramyan

doi:10.1016/S0038-1101(02)00324-6

Fabrication and electrical characteristics of polymer-based Schottky diode

Guirong Liang, Tianhong Cui, Kody Varahramyan

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 10⁴, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.

Original language	English (US)
Pages (from-to)	691-694
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(02)00324-6
State	Published - Apr 2003
Externally published	Yes

Keywords

I-V characteristics
Norde function
PEDT/PSS
Polymer Schottky diode
Spin-coating

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title = "Fabrication and electrical characteristics of polymer-based Schottky diode",

abstract = "Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 104, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.",

keywords = "I-V characteristics, Norde function, PEDT/PSS, Polymer Schottky diode, Spin-coating",

author = "Guirong Liang and Tianhong Cui and Kody Varahramyan",

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AU - Liang, Guirong

AU - Cui, Tianhong

AU - Varahramyan, Kody

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Y1 - 2003/4

N2 - Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 104, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.

AB - Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 104, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.

KW - I-V characteristics

KW - Norde function

KW - PEDT/PSS

KW - Polymer Schottky diode

KW - Spin-coating

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Fabrication and electrical characteristics of polymer-based Schottky diode

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