Abstract
Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 × 104, respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance.
Original language | English (US) |
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Pages (from-to) | 691-694 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 47 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2003 |
Externally published | Yes |
Keywords
- I-V characteristics
- Norde function
- PEDT/PSS
- Polymer Schottky diode
- Spin-coating