Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, M. Ieong

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