Fabrication of current-induced magnetization switching devices using etch-back planarization process

Yunfei Ding, Mahendra Pakala, Paul Nguyen, Hao Meng, Yiming Huai, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A patterning process for nanoscale current-perpendicular-to-plane magnetic devices was developed. Spin valve and magnetic tunnel junction (MTJ) pillars are patterned using electron-beam lithography and subsequent hard mask deposition and ion milling. Photoresist etch-back method is used to planarize the insulation layer, deposited on top of the spin valve/MTJ pillars, prior to top lead deposition. This method allows for a reduction of shadowing effect associated with the use of resist mask for ion milling. Critical switching current of ~6× 107 A cm2 was observed for spin valve nanopillars with clear field dependence of the switching current, which is comparable to the reported value for metallic system.

Original languageEnglish (US)
Article number10C702
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
StatePublished - May 15 2005

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