Abstract
Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO2 (SA-SiO2) nanoparticle thin-film as the gate dielectrics. SA-SiO 2 film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO2 thin-film was presented as a new structure with good performance.
Original language | English (US) |
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Pages (from-to) | 207-210 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
State | Published - 2003 |
Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003 |
Keywords
- Dual-gate
- Organic field-effect transistor
- Pentacene
- Self-assembly
- SiO nanoparticle