Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling

Ik Joon Chang; Kunhyuk Kang; Saibal Mukhopadhyay; Chris H. Kim; Kaushik Roy

doi:10.1109/CICC.2005.1568700

Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling

Ik Joon Chang, Kunhyuk Kang, Saibal Mukhopadhyay, Chris H. Kim, Kaushik Roy

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Scopus citations

Abstract

Variability in process parameters is making accurate estimate of nano-scale SRAM stability an extremely challenging task. In this paper, we propose a new method to detect the read failure in a SRAM cell using Critical Point Sampling technique. Using this technique, we propose two types of read failure probability estimation method, (1) quasi-analytical and (2) completely analytical method. The result shows that our proposed model can achieve high accuracy, while being 20X faster in computational speed. Our method can be applied to different phases of design to reduce the overall design time, and can be used for optimizing the given design in order to obtain a better yield.

Original language	English (US)
Title of host publication	Proceedings of the IEEE 2005 Custom Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	439-442
Number of pages	4
ISBN (Print)	0780390237, 9780780390232
DOIs	https://doi.org/10.1109/CICC.2005.1568700
State	Published - 2005
Event	IEEE 2005 Custom Integrated Circuits Conference - San Jose, CA, United States Duration: Sep 18 2005 → Sep 21 2005

Publication series

Name	Proceedings of the Custom Integrated Circuits Conference
Volume	2005
ISSN (Print)	0886-5930

Other

Other	IEEE 2005 Custom Integrated Circuits Conference
Country/Territory	United States
City	San Jose, CA
Period	9/18/05 → 9/21/05

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10.1109/CICC.2005.1568700

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Chang, I. J., Kang, K., Mukhopadhyay, S., Kim, C. H., & Roy, K. (2005). Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling. In Proceedings of the IEEE 2005 Custom Integrated Circuits Conference (pp. 439-442). Article 1568700 (Proceedings of the Custom Integrated Circuits Conference; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2005.1568700

Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling. / Chang, Ik Joon; Kang, Kunhyuk; Mukhopadhyay, Saibal et al.
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2005. p. 439-442 1568700 (Proceedings of the Custom Integrated Circuits Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chang, IJ, Kang, K, Mukhopadhyay, S, Kim, CH & Roy, K 2005, Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling. in Proceedings of the IEEE 2005 Custom Integrated Circuits Conference., 1568700, Proceedings of the Custom Integrated Circuits Conference, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 439-442, IEEE 2005 Custom Integrated Circuits Conference, San Jose, CA, United States, 9/18/05. https://doi.org/10.1109/CICC.2005.1568700

Chang IJ, Kang K, Mukhopadhyay S, Kim CH, Roy K. Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling. In Proceedings of the IEEE 2005 Custom Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2005. p. 439-442. 1568700. (Proceedings of the Custom Integrated Circuits Conference). doi: 10.1109/CICC.2005.1568700

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abstract = "Variability in process parameters is making accurate estimate of nano-scale SRAM stability an extremely challenging task. In this paper, we propose a new method to detect the read failure in a SRAM cell using Critical Point Sampling technique. Using this technique, we propose two types of read failure probability estimation method, (1) quasi-analytical and (2) completely analytical method. The result shows that our proposed model can achieve high accuracy, while being 20X faster in computational speed. Our method can be applied to different phases of design to reduce the overall design time, and can be used for optimizing the given design in order to obtain a better yield.",

author = "Chang, {Ik Joon} and Kunhyuk Kang and Saibal Mukhopadhyay and Kim, {Chris H.} and Kaushik Roy",

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AB - Variability in process parameters is making accurate estimate of nano-scale SRAM stability an extremely challenging task. In this paper, we propose a new method to detect the read failure in a SRAM cell using Critical Point Sampling technique. Using this technique, we propose two types of read failure probability estimation method, (1) quasi-analytical and (2) completely analytical method. The result shows that our proposed model can achieve high accuracy, while being 20X faster in computational speed. Our method can be applied to different phases of design to reduce the overall design time, and can be used for optimizing the given design in order to obtain a better yield.

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Fast and accurate estimation of nano-scaled SRAM read failure probability using Critical Point Sampling

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