Faulted dipoles in germanium A high-resolution transmission electron microscopy study

S. W. Chiang, C. B. Carter, D. L. Kohlstedt

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Faulted dipoles ranging in height from 3 to 12 nm in high-purity Ge have been studied by lattice-fringe and weak-bean transmission electron microscopy techniques. Only intrinsic, Z-shape faulted dipoles were observed. Lattice-fringe images of large faulted dipoles, weak-beam images of faulted dipoles, and weak-beam images of faulted dipoles, and weak-beam images of near-edge dislocations yield stacking-fault energies of 78±14 mJ m−2, respectively. When determined from the height and width of faulted dipoles viewed end-on in lattice-fringe images, the value for the stacking-fault energy calculated from anisotropic elasticity theory increases from 78 to 160 mJ m−2 as the height decreases from 6 to 3nm.

Original languageEnglish (US)
Pages (from-to)103-121
Number of pages19
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume42
Issue number1
DOIs
StatePublished - 1980

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