Faulted dipoles ranging in height from 3 to 12 nm in high-purity Ge have been studied by lattice-fringe and weak-bean transmission electron microscopy techniques. Only intrinsic, Z-shape faulted dipoles were observed. Lattice-fringe images of large faulted dipoles, weak-beam images of faulted dipoles, and weak-beam images of faulted dipoles, and weak-beam images of near-edge dislocations yield stacking-fault energies of 78±14 mJ m−2, respectively. When determined from the height and width of faulted dipoles viewed end-on in lattice-fringe images, the value for the stacking-fault energy calculated from anisotropic elasticity theory increases from 78 to 160 mJ m−2 as the height decreases from 6 to 3nm.
|Original language||English (US)|
|Number of pages||19|
|Journal||Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties|
|State||Published - 1980|