Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

C. R. Cho; L. F. Francis; D. L. Polla

doi:10.1016/S0167-577X(98)00145-1

Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O₃/LaNiO₃ thin films on single crystal and platinized-Si substrates

C. R. Cho, L. F. Francis, D. L. Polla

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Electrically conductive LaNiO₃ (LNO) and ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were deposited on single crystal (100)SrTiO₃ (STO), (100)LaAlO₃ (LAO), and Pt/Ti/SiO₂/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO₂/Si substrates were 30, 32 and 19 μC/cm², and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.

Original language	English (US)
Pages (from-to)	125-130
Number of pages	6
Journal	Materials Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/S0167-577X(98)00145-1
State	Published - Jan 1999

Bibliographical note

Funding Information:
This work was supported by the ONR under Contract No. N00014-95-1-0539 and the Korea Science and Engineering Foundation (KOSEF). The use of facilities in the Center for Interfacial Engineering at the University of Minnesota is greatly appreciated. The authors wish to thank Prof. David A. Payne, University of Illinois at Urbana-Champaign, for useful discussions of the solution preparation.

Keywords

77.22.Ch
77.80.Dj
81.15.Lm
82.80.Pv
85.50.Na
Conductive oxide
Ferroelectric
Hysteresis loop
Pb(Zr, Ti)O/LaNiO thin film
Sol-gel
Surface states

Access

10.1016/S0167-577X(98)00145-1

OpenUrl availability

Full text

Cite this

@article{54a2551a93de442fb7d3b836105b407b,

title = "Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates",

abstract = "Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 μC/cm2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.",

keywords = "77.22.Ch, 77.80.Dj, 81.15.Lm, 82.80.Pv, 85.50.Na, Conductive oxide, Ferroelectric, Hysteresis loop, Pb(Zr, Ti)O/LaNiO thin film, Sol-gel, Surface states",

author = "Cho, {C. R.} and Francis, {L. F.} and Polla, {D. L.}",

note = "Funding Information: This work was supported by the ONR under Contract No. N00014-95-1-0539 and the Korea Science and Engineering Foundation (KOSEF). The use of facilities in the Center for Interfacial Engineering at the University of Minnesota is greatly appreciated. The authors wish to thank Prof. David A. Payne, University of Illinois at Urbana-Champaign, for useful discussions of the solution preparation.",

year = "1999",

month = jan,

doi = "10.1016/S0167-577X(98)00145-1",

language = "English (US)",

volume = "38",

pages = "125--130",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

AU - Cho, C. R.

AU - Francis, L. F.

AU - Polla, D. L.

N1 - Funding Information: This work was supported by the ONR under Contract No. N00014-95-1-0539 and the Korea Science and Engineering Foundation (KOSEF). The use of facilities in the Center for Interfacial Engineering at the University of Minnesota is greatly appreciated. The authors wish to thank Prof. David A. Payne, University of Illinois at Urbana-Champaign, for useful discussions of the solution preparation.

PY - 1999/1

Y1 - 1999/1

N2 - Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 μC/cm2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.

AB - Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 μC/cm2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.

KW - 77.22.Ch

KW - 77.80.Dj

KW - 81.15.Lm

KW - 82.80.Pv

KW - 85.50.Na

KW - Conductive oxide

KW - Ferroelectric

KW - Hysteresis loop

KW - Pb(Zr, Ti)O/LaNiO thin film

KW - Sol-gel

KW - Surface states

UR - http://www.scopus.com/inward/record.url?scp=0032712226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032712226&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(98)00145-1

DO - 10.1016/S0167-577X(98)00145-1

M3 - Article

AN - SCOPUS:0032712226

SN - 0167-577X

VL - 38

SP - 125

EP - 130

JO - Materials Letters

JF - Materials Letters

IS - 2

ER -