Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

C. R. Cho, L. F. Francis, D. L. Polla

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Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 μC/cm2, and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively.

Original languageEnglish (US)
Pages (from-to)125-130
Number of pages6
JournalMaterials Letters
Issue number2
StatePublished - Jan 1999

Bibliographical note

Funding Information:
This work was supported by the ONR under Contract No. N00014-95-1-0539 and the Korea Science and Engineering Foundation (KOSEF). The use of facilities in the Center for Interfacial Engineering at the University of Minnesota is greatly appreciated. The authors wish to thank Prof. David A. Payne, University of Illinois at Urbana-Champaign, for useful discussions of the solution preparation.


  • 77.22.Ch
  • 77.80.Dj
  • 81.15.Lm
  • 82.80.Pv
  • 85.50.Na
  • Conductive oxide
  • Ferroelectric
  • Hysteresis loop
  • Pb(Zr, Ti)O/LaNiO thin film
  • Sol-gel
  • Surface states


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