Field Effect Modulation of Outer-Sphere Electrochemistry at Back-Gated, Ultrathin ZnO Electrodes

Chang Hyun Kim, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Here we report field-effect modulation of solution electrochemistry at 5 nm thick ZnO working electrodes prepared on SiO2/degenerately doped Si gates. We find that ultrathin ZnO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back gate lead to band edge shift at the front electrode/electrolyte interface. This, in turn, manipulates the charge transfer kinetics on the electrode at a given electrode potential. Experimental results and the proposed model indicate that band edge alignment can be effectively modulated by 0.1-0.4 eV depending on the density of states in the semiconductor and the capacitance of the gate/dielectric stack.

Original languageEnglish (US)
Pages (from-to)7220-7223
Number of pages4
JournalJournal of the American Chemical Society
Volume138
Issue number23
DOIs
StatePublished - Jun 15 2016

How much support was provided by MRSEC?

  • Shared

Reporting period for MRSEC

  • Period 3

PubMed: MeSH publication types

  • Journal Article

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