Abstract
A two-dimensional model for the coupled effects of heat transfer and capillarity in a liquid encapsulated Czochralski growth system is analyzed by solving the full free-boundary problem describing the temperature field in each phase, the shapes of the melt/solid and fluid/fluid interfaces, and the radius of a steadily growing crystal. Solutions are based on a finite element analysis with Newton iteration for all the variables. Heat transfer in the melt is taken to be dominated by conduction, and radiation to a uniform ambient is included for a transparent encapsulant. Calculations for a model GaAs system give reasonable predictions of crystal size and axial temperature gradient. The results are most sensitive to radiation through the encapsulant.
Original language | English (US) |
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Pages (from-to) | 470-482 |
Number of pages | 13 |
Journal | Journal of the Electrochemical Society |
Volume | 132 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1985 |