Finite element simulations of stresses in CUP Bond pads of Al-Si0 2 interconnect

Stevan G. Hunter, Ryan Gohnert, Alan J. Dutson, D. Subbaram Naidu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

[EPTC2012 p319.doc] Bond pads in IC technologies having aluminum-based metallization (Al) and silicon dioxide dielectric (Si02) are studied in relation to stresses from unit probe and wirebond, with emphasis on bond pads with thin pad Al. Finite element simulations attempt to replicate bond pad experimental data previously disclosed by ON Semiconductor. The simulations predict bond pad internal stress locations and magnitudes, providing more understanding of why one bond pad cracks and another doesn't. Implications for bond pad design and copper (Cu) wirebond on circuit under pad (CUP) are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012
Pages125-130
Number of pages6
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012 - Singapore, Singapore
Duration: Dec 5 2012Dec 7 2012

Other

Other2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012
CountrySingapore
CitySingapore
Period12/5/1212/7/12

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