First principle study of Si and Ge band structure for UTB MOSFETs applications

Tony Low, Y. P. Feng, M. F. Li, G. Samudra, Y. C. Yeo, P. Bai, L. Chan, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Ab initio study of the band structures of Si and Ge thin film is conducted for all common surface orientations with film thickness ranging from 4nm to Inm. The ab initio calculation predicts features not captured by the conventional effective mass approximation such as the deviation from isotropic energy dispersion for one of the two-fold degenerate Δ valleys at G for Ge〈100〉 and shifting of Δ valley minima towards G as film thickness decreases for Ge〈110〉.It also offers more reliable insights into the problem of L and Δ valleys competition for carrier occupation in Ge〈100〉 and Ge〈110〉. Our study predicts that Ge thin film band structure at 〈110〉 surface with [110] channel direction has the highest average hole/electron carrier velocity down to a body thickness of 1nm, making it a promising candidate for aggressively scaled UTB MOSFETs.

Original languageEnglish (US)
Title of host publication2005 International Semiconductor Device Research Symposium
Pages358-359
Number of pages2
StatePublished - Dec 1 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
Country/TerritoryUnited States
CityBethesda, MD
Period12/7/0512/9/05

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