In this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa  // GaAs  and a tetragonal structure of the film (a = b = 5.79 angstrom, c = 6.07 angstrom). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of approx. 200 emu/cm3 at room temperature and a Curie temperature of approx. 350 K. The martensitic phase transformation was observed to occur at approx. 250 K.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 2000|
|Event||Materials for Smart Systems III - Boston, MA, USA|
Duration: Nov 30 1999 → Dec 2 1999