Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

Engineering & Materials Science

• Plasma etching 100%
• Fluorocarbons 98%
• Silicon oxides 97%
• Oxide films 83%
• Etching 72%
• Composite films 71%
• Composite materials 38%
• Plasmas 30%
• Plasma diagnostics 29%
• Gases 19%
• Electrons 16%

Physics & Astronomy

• fluorocarbons 85%
• plasma etching 75%
• silicon oxides 70%
• oxide films 60%
• chambers 53%
• composite materials 41%
• etching 40%
• plasma diagnostics 16%
• electron impact 13%
• dissociation 11%
• vapor phases 10%
• reactors 10%
• products 8%
• gases 6%