Fugitive Diffusion Barrier for Integration of Sol‐Gel‐Derived Lead Titanate with Oxidized Silicon Substrates

John S. Wright, Joseph M. Schwartz, Lanny D. Schmidt, Lorraine Falter Francis

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The crystalline phase development and microstructural changes with heating of sol‐gel‐derived lead titanate (PT) particles and films on silica with and without a fugitive (or removable) diffusion barrier layer were investigated. Amorphous gel‐derived PT particles were deposited on SiO2‐coated TEM grids with and without polyimide (PI) or carbon barrier layers between SiO2 and PT. TEM analysis showed that PI or carbon barriers prevented reaction between the gel‐derived PT particles and SiO2. PT particles crystallize and then the PI or carbon film decomposes. Sol‐gel‐derived PT films were deposited on oxidized Si substrates (Si/SiO2) with and without a PI barrier layer. Perovskite PT films were prepared on Si/SiO2 substrates with a PI barrier; however, some porosity remained in the films. Identically prepared films without the PI barrier formed a mixture of pyrochlore and perovskite. X‐ray photoelectron spectroscopy results indicate that the PI film pre‐ vents the diffusion of Si into the PT film.

Original languageEnglish (US)
Pages (from-to)2360-2366
Number of pages7
JournalJournal of the American Ceramic Society
Volume78
Issue number9
DOIs
StatePublished - Sep 1995

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