GaAs FET RF SWITCHES.

Anand Gopinath, J. Bruce Rankin

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

The device parameter dependence of GaAs FET switch performance has been determined analytically and by two-dimensional simulation. FET switch design may be optimized to maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters.

Original languageEnglish (US)
Pages (from-to)1272-1278
Number of pages7
JournalIEEE Transactions on Electron Devices
VolumeED-32
Issue number7
DOIs
StatePublished - Jan 1 1985

Fingerprint

Dive into the research topics of 'GaAs FET RF SWITCHES.'. Together they form a unique fingerprint.

Cite this