Abstract
The device parameter dependence of GaAs FET switch performance has been determined analytically and by two-dimensional simulation. FET switch design may be optimized to maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters.
Original language | English (US) |
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Pages (from-to) | 1272-1278 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | ED-32 |
Issue number | 7 |
DOIs | |
State | Published - 1985 |